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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 5.6V @ 13.3mA
Operating Temperature : 175°C (TJ)
Package / Case : TO-247-3
Gate Charge (Qg) (Max) @ Vgs : 104 nC @ 18 V
Rds On (Max) @ Id, Vgs : 39mOhm @ 27A, 18V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 18V
Package : Tube
Drain to Source Voltage (Vdss) : 650 V
Vgs (Max) : +22V, -4V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 1526 pF @ 500 V
Mounting Type : Through Hole
Series : -
Supplier Device Package : TO-247N
Mfr : Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C : 70A (Tc)
Power Dissipation (Max) : 262W (Tc)
Technology : SiCFET (Silicon Carbide)
Base Product Number : SCT3030
Description : SICFET N-CH 650V 70A TO247N
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SCT3030ALGC11 Images |
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