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Gate-Emitter Leakage Current : +/- 200 nA
Product Category : IGBT Transistors
Mounting Style : SMD/SMT
Continuous Collector Current at 25 C : 104 A
Pd - Power Dissipation : 500 W
Collector- Emitter Voltage VCEO Max : 3 kV
Package / Case : TO-268HV-2
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 25 V
Configuration : Single
Collector-Emitter Saturation Voltage : 2.5 V
Manufacturer : IXYS
Description : IGBT Transistors
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IXBT42N300HV Images |
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