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Gate-Emitter Leakage Current : +/- 400 nA
Product Category : IGBT Transistors
Mounting Style : SMD/SMT
Continuous Collector Current at 25 C : 10 A
Pd - Power Dissipation : 69 W
Collector- Emitter Voltage VCEO Max : 1.2 kV
Package / Case : D-PAK-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 25 V
Packaging : Reel
Configuration : Single
Collector-Emitter Saturation Voltage : 2.9 V
Manufacturer : Fairchild Semiconductor
Description : IGBT Transistors 1200V 5A Field Stop Trench IGBT
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