Sign In | Join Free | My xpandrally.com |
|
Gate-Emitter Leakage Current : 400 nA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 1390 A
Pd - Power Dissipation : 6.25 kW
Collector- Emitter Voltage VCEO Max : 1700 V
Package / Case : PRIME3
Maximum Operating Temperature : + 150 C
Configuration : Dual
Collector-Emitter Saturation Voltage : 2.45 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
Description : IGBT Modules N-CH 1.7KV 1.39KA
![]() |
FF1000R17IE4 Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.